R5013ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

30 ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Rds On (Max) @ Id, Vgs :

380m Ω @ 6.5A, 10V

Terminal Finish :

Tin/Copper (Sn/Cu)

Turn On Delay Time :

30 ns

JESD-609 Code :

e2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

52A

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

10

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

150°C TJ

Pin Count :

3

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

500V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500V

Turn-Off Delay Time :

90 ns

Vgs(th) (Max) @ Id :

4.5V @ 1mA

FET Type :

N-Channel

Continuous Drain Current (ID) :

13A

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Terminal Position :

Single

Number of Channels :

1

Transistor Application :

SWITCHING

Power Dissipation-Max :

100W Tc

Rise Time :

32ns

JESD-30 Code :

R-PSSO-G2