R5013ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

90 ns

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Continuous Drain Current (ID) :

13A

Lead Free :

Lead Free

Power Dissipation-Max :

100W Tc

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Rise Time :

32ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 6.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

52A

Terminal Form :

Gull wing

Terminal Finish :

Tin/Copper (Sn/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn On Delay Time :

30 ns

Number of Elements :

1

Pin Count :

3

Vgs (Max) :

±30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Fall Time (Typ) :

30 ns

Number of Pins :

3

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V

Radiation Hardening :

No