R5011FNX

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

8.1 mJ

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Published :

2012

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Power Dissipation-Max :

50W Tc

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500V

Current - Continuous Drain (Id) @ 25°C :

11A Ta 5.4A Tc

Drain-source On Resistance-Max :

0.52Ohm

Mount :

Through Hole

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

30 ns

Rds On (Max) @ Id, Vgs :

520m Ω @ 5.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Rise Time :

28ns

Time@Peak Reflow Temperature-Max (s) :

10

Drain Current-Max (Abs) (ID) :

11A

Number of Pins :

3

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

44A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

5.4A

Packaging :

Bulk

Turn On Delay Time :

26 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Turn-Off Delay Time :

75 ns

Radiation Hardening :

No