R5009ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

62 ns

Gate to Source Voltage (Vgs) :

30V

Mount :

Surface Mount

Published :

2009

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

9A

JESD-609 Code :

e2

Turn On Delay Time :

30 ns

Pin Count :

3

Rise Time :

20ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Terminal Finish :

Tin/Copper (Sn/Cu)

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

5.4 mJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.72Ohm

Drain Current-Max (Abs) (ID) :

9A

Power Dissipation-Max :

50W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Fall Time (Typ) :

28 ns

Number of Channels :

1

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

720m Ω @ 4.5A, 10V

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Lead Free :

Lead Free

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Operating Temperature :

150°C TJ

Number of Elements :

1