QS6U22TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

12V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2006

Transistor Application :

SWITCHING

Pbfree Code :

yes

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.25W Ta

Number of Pins :

6

Drain-source On Resistance-Max :

0.235Ohm

Operating Temperature :

150°C TJ

Rise Time :

12ns

Power Dissipation :

1.25W

Continuous Drain Current (ID) :

1.5A

FET Type :

P-Channel

Transistor Element Material :

SILICON

Terminal Position :

Dual

Radiation Hardening :

No

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e1

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2V @ 1mA

Rds On (Max) @ Id, Vgs :

215m Ω @ 1.5A, 4.5V

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

Gull wing

Current Rating :

-1.5A

Number of Elements :

1

Voltage - Rated DC :

-20V

FET Feature :

Schottky Diode (Isolated)

Turn-Off Delay Time :

45 ns

Pin Count :

6

Threshold Voltage :

-2V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount