PSMN3R0-60BS

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Fall Time (Typ) :

22 ns

Pin Count :

3

Element Configuration :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

JESD-609 Code :

e3

Turn On Delay Time :

31 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Continuous Drain Current (ID) :

100A

Power Dissipation :

306W

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

306W Tc

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Rise Time :

26ns

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Max Dual Supply Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

77 ns

Number of Terminations :

2

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

8079pF @ 30V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pulsed Drain Current-Max (IDM) :

824A

Number of Pins :

3

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

800 mJ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V