PSMN2R9-30MLC115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

19.3 ns

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

FET Type :

N-Channel

Turn-Off Delay Time :

24.6 ns

Case Connection :

DRAIN

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Max Dual Supply Voltage :

30V

Continuous Drain Current (ID) :

70A

Turn On Delay Time :

17.7 ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

36.1nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Published :

2012

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Power Dissipation-Max :

91W Tc

Avalanche Energy Rating (Eas) :

75 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2419pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

30.8ns

Terminal Form :

Gull wing

Package / Case :

SOT-1210, 8-LFPAK33

Terminal Position :

Single

Power Dissipation :

91W

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 25A, 10V

Pin Count :

8

JESD-30 Code :

R-PSSO-G4

Pulsed Drain Current-Max (IDM) :

523A

Factory Lead Time :

26 Weeks

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Radiation Hardening :

No