PSMN028-100YS115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

RoHS Status :

ROHS3 Compliant

Rise Time :

14ns

Number of Pins :

4

Power Dissipation-Max :

89W Tc

Pin Count :

4

Continuous Drain Current (ID) :

42A

Surface Mount :

No

Mounting Type :

Surface Mount

Terminal Form :

THROUGH-HOLE

Power Dissipation :

89W

Drain-source On Resistance-Max :

0.0275Ohm

Package / Case :

SC-100, SOT-669

JEDEC-95 Code :

MO-235

Drain Current-Max (Abs) (ID) :

30A

FET Type :

N-Channel

Max Dual Supply Voltage :

100V

Vgs (Max) :

±20V

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Published :

2010

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 15A, 10V

Avalanche Energy Rating (Eas) :

68 mJ

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Terminations :

4

Terminal Position :

Single

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1634pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

15 ns