PSMN017-30BL118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Turn-Off Delay Time :

11.4 ns

JESD-609 Code :

e3

Fall Time (Typ) :

5.1 ns

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Number of Terminations :

2

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

32A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

47W Tc

Transistor Application :

SWITCHING

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Pulsed Drain Current-Max (IDM) :

154A

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

552pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

17m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Surface Mount :

yes

Power Dissipation :

47W

Terminal Finish :

Tin (Sn)

Pin Count :

3

Vgs (Max) :

±20V

Rise Time :

9.2ns

Max Dual Supply Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

10.7nC @ 10V

Turn On Delay Time :

10.7 ns

Vgs(th) (Max) @ Id :

2.15V @ 1mA