PN2907ABU
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- Mfr.Part #
- PN2907ABU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 3,597
- In Stock ：
- 3,597
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Number of Terminations :
- 3
- Width :
- 3.93mm
- Base Part Number :
- PN2907A
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 400mV
- Voltage - Rated DC :
- -60V
- Factory Lead Time :
- 7 Weeks
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 625mW
- Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- Height :
- 4.7mm
- Turn On Time-Max (ton) :
- 45ns
- Transition Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- -60V
- hFE Min :
- 100
- Frequency :
- 200MHz
- Weight :
- 179mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 200MHz
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Current Rating :
- -800mA
- Mount :
- Through Hole
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Max Collector Current :
- 800mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Length :
- 4.7mm
- Number of Elements :
- 1
- Datasheets
- PN2907ABU
PN2907ABU Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN2907ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).200MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
PN2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ABU Applications
There are a lot of ON Semiconductor
PN2907ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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