PN2907ABU
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- Mfr.Part #
- PN2907ABU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 3,597
- In Stock ：
- 3,597
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 400mV
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -60V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Voltage - Rated DC :
- -60V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Height :
- 4.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 4.7mm
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- hFE Min :
- 100
- Width :
- 3.93mm
- Transition Frequency :
- 200MHz
- Turn On Time-Max (ton) :
- 45ns
- Factory Lead Time :
- 7 Weeks
- Weight :
- 179mg
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Base Part Number :
- PN2907A
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Current Rating :
- -800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 200MHz
- Max Collector Current :
- 800mA
- Datasheets
- PN2907ABU
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN2907ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).200MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
PN2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ABU Applications
There are a lot of ON Semiconductor
PN2907ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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