PN2907ABU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

100

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

PN2907A

Gain Bandwidth Product :

200MHz

Collector Emitter Voltage (VCEO) :

60V

Transistor Application :

SWITCHING

Published :

2007

Lead Free :

Lead Free

Transition Frequency :

200MHz

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

-5V

Number of Pins :

3

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

400mV

Number of Terminations :

3

Height :

4.7mm

Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Current Rating :

-800mA

Length :

4.7mm

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-60V

Max Power Dissipation :

625mW

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Max Collector Current :

800mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

REACH SVHC :

No SVHC

Frequency :

200MHz

Weight :

179mg

JESD-609 Code :

e3

Mount :

Through Hole

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time-Max (ton) :

45ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

20nA ICBO

Packaging :

Bulk

Element Configuration :

Single

Width :

3.93mm

Factory Lead Time :

7 Weeks

Transistor Type :

PNP

Number of Elements :

1

Collector Base Voltage (VCBO) :

-60V