PMBFJ111,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

Voltage - Breakdown (V(BR)GSS) :

40V

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

6pF @ 10V VGS

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-236AB

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

30Ohm

Terminal Form :

Gull wing

HTS Code :

8541.21.00.95

Resistance - RDS(On) :

30Ohm

Operating Mode :

Depletion Mode

Terminal Position :

Dual

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Power - Max :

300mW

Configuration :

Single

FET Technology :

JUNCTION

Base Part Number :

MBFJ111

Terminal Finish :

Tin (Sn)

Current - Drain (Idss) @ Vds (Vgs=0) :

20mA @ 15V

Packaging :

Tape and Reel (TR)

Published :

2001

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-G3

Power Dissipation-Max (Abs) :

0.3W

Transistor Element Material :

SILICON

Number of Elements :

1

Voltage - Cutoff (VGS off) @ Id :

10V @ 1μA

Number of Terminations :

3