PMBFJ109,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

FET Technology :

JUNCTION

Transistor Element Material :

SILICON

Resistance - RDS(On) :

12Ohm

Operating Temperature :

150°C TJ

Number of Elements :

1

Qualification Status :

Not Qualified

Voltage - Cutoff (VGS off) @ Id :

6V @ 1μA

Power Dissipation-Max (Abs) :

0.25W

Factory Lead Time :

8 Weeks

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

Depletion Mode

FET Type :

N-Channel

Current - Drain (Idss) @ Vds (Vgs=0) :

40mA @ 15V

DS Breakdown Voltage-Min :

25V

Number of Terminations :

3

Base Part Number :

MBFJ109

Feedback Cap-Max (Crss) :

15 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Finish :

Tin

JEDEC-95 Code :

TO-236AB

JESD-30 Code :

R-PDSO-G3

Drain-source On Resistance-Max :

12Ohm

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.95

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Pin Count :

3

JESD-609 Code :

e3

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Voltage - Breakdown (V(BR)GSS) :

25V

Power - Max :

250mW

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 10V VGS

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Published :

2001