PMBF4391,215
- Mfr.Part #
- PMBF4391,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- JFET N-CH 40V 250MW SOT23
- Stock
- 15,283
- In Stock :
- 15,283
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - JFETs
- Operating Mode :
- Depletion Mode
- HTS Code :
- 8541.21.00.95
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 50mA @ 20V
- Drain-source On Resistance-Max :
- 30Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max (Abs) :
- 0.25W
- DS Breakdown Voltage-Min :
- 40V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 14pF @ 20V
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Published :
- 1997
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Time-Max (ton) :
- 80ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F3
- Number of Elements :
- 1
- Feedback Cap-Max (Crss) :
- 3.5 pF
- Voltage - Cutoff (VGS off) @ Id :
- 4V @ 1nA
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- MBF4391
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Technology :
- JUNCTION
- Resistance - RDS(On) :
- 30Ohm
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Max (toff) :
- 20ns
- Power - Max :
- 250mW
- Voltage - Breakdown (V(BR)GSS) :
- 40V
- Drain Current-Max (Abs) (ID) :
- 0.012A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Datasheets
- PMBF4391,215

PMBF4391,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at
PMBF4391,215 Description
For use in thick and thin-film circuits, symmetrical silicon n-channel depletion type junction field-effect transistors are mounted on a plastic microminiature envelope. The transistors are designed for low-power switching or chopping applications in the industrial sector. PMBF4391,215 is an N-channel single JEFT transistor from the manufacturer NXP USA Inc with a breakdown voltage of 40V.
PMBF4391,215 Features
-
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
-
Voltage - Breakdown (V(BR)GSS): 40V
-
Drain Current-Max (Abs) (ID): 0.012A
-
Feedback Cap-Max (Crss): 3.5 pF
-
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
PMBF4391,215 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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