PMBFJ108,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 10V VGS

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

15 pF

Qualification Status :

Not Qualified

Pin Count :

3

Power - Max :

250mW

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Terminal Position :

Dual

Power Dissipation-Max (Abs) :

0.25W

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

25V

HTS Code :

8541.21.00.95

JESD-609 Code :

e3

FET Technology :

JUNCTION

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

40

Resistance - RDS(On) :

8Ohm

Operating Temperature :

150°C TJ

Voltage - Breakdown (V(BR)GSS) :

25V

Drain-source On Resistance-Max :

8Ohm

Surface Mount :

yes

Operating Mode :

Depletion Mode

Base Part Number :

MBFJ108

JESD-30 Code :

R-PDSO-G3

Voltage - Cutoff (VGS off) @ Id :

10V @ 1μA

Transistor Application :

SWITCHING

Current - Drain (Idss) @ Vds (Vgs=0) :

80mA @ 15V

Number of Terminations :

3

JEDEC-95 Code :

TO-236AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)