PHP176NQ04T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

68.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3620pF @ 25V

Drain-source On Resistance-Max :

0.0043Ohm

Avalanche Energy Rating (Eas) :

560 mJ

Qualification Status :

Not Qualified

Power Dissipation-Max :

250W Tc

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

40V

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 25A, 10V

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

240A