PHP101NQ04T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.008Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

200 mJ

Series :

TrenchMOS™

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 1mA

JEDEC-95 Code :

TO-220AB

Published :

2009

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Power Dissipation-Max :

157W Tc

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

36.6nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

240A

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

75A

Surface Mount :

No