PHP101NQ03LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

240A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Vgs (Max) :

±20V

Published :

2009

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

185 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0075Ohm

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

75A

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 25A, 10V

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 5V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

2180pF @ 25V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Surface Mount :

No

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation-Max :

166W Tc

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

30V