PHP152NQ03LTA,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

150W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

Qualification Status :

Not Qualified

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pulsed Drain Current-Max (IDM) :

240A

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.005ohm

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 5V

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Packaging :

Tube

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Published :

1997

Vgs(th) (Max) @ Id :

2V @ 1mA

DS Breakdown Voltage-Min :

25V

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

560 mJ

Drain to Source Voltage (Vdss) :

25V

Pin Count :

3

ECCN Code :

EAR99

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN