PHP129NQ04LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Terminations :

3

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.0071Ohm

Vgs (Max) :

±15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

44.2nC @ 5V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Case Connection :

DRAIN

Power Dissipation-Max :

200W Tc

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3965pF @ 25V

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

2V @ 1mA

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

240A

DS Breakdown Voltage-Min :

40V

JESD-609 Code :

e3

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

75A

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Pin Count :

3

Avalanche Energy Rating (Eas) :

475 mJ

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED