PHP119NQ06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

75A

DS Breakdown Voltage-Min :

55V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0071Ohm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

280 mJ

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

2820pF @ 25V

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

7.1m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

240A

Terminal Position :

Single

Power Dissipation-Max :

200W Tc

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

55V

Number of Elements :

1

Series :

TrenchMOS™

Case Connection :

DRAIN

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE