PHP110NQ08LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

75V

Gate Charge (Qg) (Max) @ Vgs :

127.3nC @ 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

75A

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Drain-source On Resistance-Max :

0.00995Ohm

Surface Mount :

No

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

6631pF @ 25V

Pin Count :

3

Terminal Position :

Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

560 mJ

Mounting Type :

Through Hole

Number of Terminations :

3

Terminal Finish :

Tin

Power Dissipation-Max :

230W Tc

Drain to Source Voltage (Vdss) :

75V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Published :

1997

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 25A, 10V

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

TrenchMOS™

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

240A