PHE13003C,126
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- Mfr.Part #
- PHE13003C,126
- Manufacturer
- WeEn Semiconductors Co., Ltd
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO92-3
- Stock
- 9,560
- In Stock ：
- 9,560
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- Manufacturer :
- WeEn Semiconductors Co., Ltd
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100μA
- Current - Collector (Ic) (Max) :
- 1.5A
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power - Max :
- 2.1W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 1A 2V
- Datasheets
- PHE13003C,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 100μA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PHE13003C,126 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 1.5A.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.
PHE13003C,126 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
PHE13003C,126 Applications
There are a lot of WeEn Semiconductors
PHE13003C,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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