PHE13003C,412
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- Mfr.Part #
- PHE13003C,412
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A SOT54
- Stock
- 1,875
- In Stock ：
- 1,875
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 1.5A
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 1A 2V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Power - Max :
- 2.1W
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 1.5A
- Datasheets
- PHE13003C,412
NPN 150°C TJ 100μA TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PHE13003C,412 Overview
DC current gain in this device equals 5 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500mA, 1.5A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PHE13003C,412 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
PHE13003C,412 Applications
There are a lot of WeEn Semiconductors
PHE13003C,412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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