PHD16N03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±15V

FET Type :

N-Channel

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

16A

Pin Count :

3

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin

Vgs(th) (Max) @ Id :

2V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

32A

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Power Dissipation-Max :

32.6W Tc

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Number of Elements :

1

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.067Ohm

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

67m Ω @ 16A, 10V