PHD108NQ03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

16.3nC @ 4.5V

Mounting Type :

Surface Mount

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

240A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

25V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA

ECCN Code :

EAR99

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1375pF @ 12V

Drain-source On Resistance-Max :

0.0075Ohm

Terminal Finish :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain Current-Max (Abs) (ID) :

75A

Qualification Status :

Not Qualified

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6m Ω @ 25A, 10V

Published :

2005

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Pin Count :

3

Power Dissipation-Max :

187W Tc

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

25V

FET Type :

N-Channel

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

180 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3