PHD101NQ03LT,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

185 mJ

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

240A

HTS Code :

8541.29.00.75

Case Connection :

DRAIN

Surface Mount :

yes

Power Dissipation :

166W

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

75A Tc

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Turn On Delay Time :

23 ns

Element Configuration :

Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 5V

Terminal Finish :

Tin (Sn)

Published :

2009

Continuous Drain Current (ID) :

75A

Transistor Application :

SWITCHING

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

2180pF @ 25V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 25A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

37 ns

Drain-source On Resistance-Max :

0.0075Ohm

Terminal Form :

Gull wing

Factory Lead Time :

26 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Rise Time :

90ns

Vgs (Max) :

±20V

Fall Time (Typ) :

33 ns

Number of Elements :

1

ECCN Code :

EAR99

Max Dual Supply Voltage :

30V

Power Dissipation-Max :

166W Tc

Drain to Source Breakdown Voltage :

30V