PD84010-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Voltage (Vdss) :

40V

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G2

Current - Test :

300mA

Number of Terminations :

2

Terminal Form :

Gull wing

Voltage - Test :

7.5V

Lifecycle Status :

OBSOLETE (Last Updated: 8 months ago)

Mount :

Surface Mount

Case Connection :

SOURCE

Max Power Dissipation :

95W

Max Output Power :

10W

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

8A

Transistor Type :

LDMOS

Pin Count :

10

Radiation Hardening :

No

Number of Pins :

3

Element Configuration :

Single

Gain :

16.3dB

Max Operating Temperature :

165°C

Packaging :

Tube

JESD-609 Code :

e3

Frequency :

870MHz

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Base Part Number :

PD84010

Peak Reflow Temperature (Cel) :

250

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

95W

Gate to Source Voltage (Vgs) :

15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

8A

Number of Elements :

1

Min Operating Temperature :

-65°C

Power - Output :

2W