PD84001
- Mfr.Part #
- PD84001
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- FET RF 18V 870MHZ
- Stock
- 4,317
- In Stock :
- 4,317
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Max Output Power :
- 1W
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -65°C
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PDSO-F4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Number of Pins :
- 3
- Base Part Number :
- PD84001
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 11 Weeks
- Power Gain :
- 15dB
- Number of Terminations :
- 4
- Voltage - Test :
- 7.5V
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 18V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Continuous Drain Current (ID) :
- 1.5A
- Transistor Type :
- LDMOS
- Power Dissipation :
- 6W
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Current - Test :
- 50mA
- Weight :
- 130.492855mg
- Frequency :
- 870MHz
- Current Rating :
- 1.5A
- Power - Output :
- 30dBm
- Package / Case :
- TO-243AA
- Terminal Form :
- Flat
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Dual
- Case Connection :
- SOURCE
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 15V
- Max Power Dissipation :
- 6W
- Element Configuration :
- Single
- Min Breakdown Voltage :
- 18V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Datasheets
- PD84001
PD84001 Documents
PD84001 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
PD84001 Description
PD84001 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD84001 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD84001 has the excellent thermal stability.
PD84001 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
PD84001 Applications
ISM applications
DC large signal applications
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