PD84006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Finish :

Matte Tin (Sn) - annealed

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Max Power Dissipation :

59W

Factory Lead Time :

52 Weeks

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Additional Feature :

High Reliability

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Drain to Source Voltage (Vdss) :

25V

Continuous Drain Current (ID) :

5A

Gain :

15dB

Peak Reflow Temperature (Cel) :

250

Transistor Type :

LDMOS

Operating Mode :

ENHANCEMENT MODE

Current - Test :

150mA

Power Dissipation :

59W

Frequency :

870MHz

JESD-30 Code :

R-PDSO-G2

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

25V

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Voltage - Test :

7.5V

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

15V

Max Output Power :

6W

Base Part Number :

PD84006

Qualification Status :

Not Qualified

Package / Case :

PowerSO-10 Exposed Bottom Pad

Number of Pins :

3

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Current Rating :

5A

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

5A

Case Connection :

SOURCE

Pin Count :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR