PBSS5250X,135
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- Mfr.Part #
- PBSS5250X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A SOT89
- Stock
- 444
- In Stock ：
- 444
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-243AA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Base Part Number :
- PBSS5250
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- JESD-30 Code :
- R-PSSO-F3
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Datasheets
- PBSS5250X,135
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS5250X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS5250X,135 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5250X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS5250X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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