PBSS5160U,115
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- Mfr.Part #
- PBSS5160U,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A SOT323
- Stock
- 143,036
- In Stock ：
- 143,036
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-70, SOT-323
- Length :
- 6.35mm
- hFE Min :
- 200
- Terminal Form :
- Gull wing
- Max Collector Current :
- 700mA
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 415mW
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 1A
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Frequency :
- 185MHz
- Width :
- 6.35mm
- Max Breakdown Voltage :
- 60V
- Base Part Number :
- PBSS5160
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Weight :
- 4.535924g
- Gain Bandwidth Product :
- 185MHz
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Max Power Dissipation :
- 415mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Pin Count :
- 3
- Element Configuration :
- Single
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 220MHz
- Mount :
- Surface Mount
- Published :
- 2008
- Current - Collector Cutoff (Max) :
- 100nA
- Height :
- 6.35mm
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Datasheets
- PBSS5160U,115
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
PBSS5160U,115 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 340mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 700mA volts is possible.
PBSS5160U,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5160U,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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