PBSS5160T,215
- Mfr.Part #
- PBSS5160T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO236AB
- Stock
- 221,402
- In Stock :
- 221,402
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Length :
- 6.35mm
- Height :
- 6.35mm
- Power - Max :
- 400mW
- Power Dissipation :
- 1.25W
- Pin Count :
- 3
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 220MHz
- Gain Bandwidth Product :
- 220MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 1A
- Frequency :
- 220MHz
- Terminal Finish :
- Tin (Sn)
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Base Part Number :
- PBSS5160
- Mounting Type :
- Surface Mount
- Width :
- 6.35mm
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 270mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 100mA, 1A
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- hFE Min :
- 200
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- PBSS5160T,215

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5160T,215 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 330mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
PBSS5160T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5160T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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