PBSS5160T,215

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Mfr.Part #
PBSS5160T,215
Manufacturer
Nexperia
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 60V 1A TO236AB
Stock
221,402
In Stock :
221,402

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2009
Length :
6.35mm
Height :
6.35mm
Power - Max :
400mW
Power Dissipation :
1.25W
Pin Count :
3
Number of Pins :
3
Max Breakdown Voltage :
60V
Collector Base Voltage (VCBO) :
80V
Emitter Base Voltage (VEBO) :
-5V
Transition Frequency :
220MHz
Gain Bandwidth Product :
220MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Collector Emitter Breakdown Voltage :
60V
Max Collector Current :
1A
Frequency :
220MHz
Terminal Finish :
Tin (Sn)
Weight :
4.535924g
REACH SVHC :
No SVHC
Package / Case :
TO-236-3, SC-59, SOT-23-3
Peak Reflow Temperature (Cel) :
260
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Base Part Number :
PBSS5160
Mounting Type :
Surface Mount
Width :
6.35mm
JESD-609 Code :
e3
Transistor Type :
PNP
Number of Terminations :
3
ECCN Code :
EAR99
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 500mA 5V
Current - Collector Cutoff (Max) :
100nA
Transistor Element Material :
SILICON
Max Power Dissipation :
270mW
Collector Emitter Voltage (VCEO) :
60V
Terminal Position :
Dual
Factory Lead Time :
4 Weeks
Vce Saturation (Max) @ Ib, Ic :
330mV @ 100mA, 1A
Radiation Hardening :
No
Polarity/Channel Type :
PNP
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Element Configuration :
Single
hFE Min :
200
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
PBSS5160T,215
Introducing Transistors - Bipolar (BJT) - Single Nexperia PBSS5160T,215 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:PBSS5160, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:150°C TJ, PBSS5160T,215 pinout, PBSS5160T,215 datasheet PDF, PBSS5160T,215 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia PBSS5160T,215 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PBSS5160T,215


PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

PBSS5160T,215 Overview


This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 330mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.

PBSS5160T,215 Features


the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz


PBSS5160T,215 Applications


There are a lot of Nexperia USA Inc.
PBSS5160T,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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