PBSS5140T,215
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- Mfr.Part #
- PBSS5140T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO236AB
- Stock
- 149,002
- In Stock ：
- 149,002
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Number of Elements :
- 1
- Frequency - Transition :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS5140
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Power - Max :
- 450mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Transistor Application :
- SWITCHING
- Datasheets
- PBSS5140T,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS5140T,215 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
PBSS5140T,215 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 150MHz
PBSS5140T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS5140T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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