PBSS5120T,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Radiation Hardening :

No

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 500mA 2V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 1A

Power Dissipation :

480mW

Max Collector Current :

1A

Published :

2003

Element Configuration :

Single

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Factory Lead Time :

4 Weeks

hFE Min :

300

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Max Power Dissipation :

480mW

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

200V

Weight :

4.535924g

Lead Free :

Lead Free

Number of Pins :

3

Collector Emitter Breakdown Voltage :

20V

Terminal Position :

Dual

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

-5V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Base Part Number :

PBSS5120

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Type :

PNP

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Frequency :

100MHz

Number of Elements :

1

Width :

6.35mm

Collector Base Voltage (VCBO) :

20V

Gain Bandwidth Product :

100MHz

Height :

6.35mm

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

20V

RoHS Status :

ROHS3 Compliant

Length :

6.35mm