PBSS4560PA,115
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- Mfr.Part #
- PBSS4560PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 60V 6A 3HUSON
- Stock
- 8,766
- In Stock ：
- 8,766
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 2.1W
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS4560
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 6A
- Published :
- 2007
- Max Power Dissipation :
- 2.1W
- Transistor Type :
- NPN
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 150MHz
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 3-PowerUDFN
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2A 2V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 300mA, 6A
- hFE Min :
- 70
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- PBSS4560PA,115
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
PBSS4560PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2A 2V.When VCE saturation is 290mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
PBSS4560PA,115 Features
the DC current gain for this device is 210 @ 2A 2V
the vce saturation(Max) is 290mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS4560PA,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4560PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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