PBSS4480X,135
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- Mfr.Part #
- PBSS4480X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- PBSS4480X - 80 V, 4 A NPN LOW VC
- Stock
- 3,684
- In Stock ：
- 3,684
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 2A 2V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Zener Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Transition Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Power - Max :
- 1.6W
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- PBSS4480
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 80V
- Termination :
- SMD/SMT
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 500mA, 5A
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- hFE Min :
- 250
- Length :
- 12.7mm
- Frequency :
- 150MHz
- Test Current :
- 5mA
- Power Dissipation :
- 2.5W
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Width :
- 6.35mm
- Max Collector Current :
- 4A
- Max Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Height :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Flat
- Max Power Dissipation :
- 550mW
- Gain Bandwidth Product :
- 150MHz
- Published :
- 2003
- Datasheets
- PBSS4480X,135
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4480X,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 175 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 4A volts.
PBSS4480X,135 Features
the DC current gain for this device is 175 @ 2A 2V
the vce saturation(Max) is 270mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS4480X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4480X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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