PBSS4250X,115
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- Mfr.Part #
- PBSS4250X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT89
- Stock
- 17,800
- In Stock ：
- 17,800
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 380mV
- Transistor Element Material :
- SILICON
- Width :
- 2.6mm
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2003
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 4.6mm
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 1.6mm
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1W
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Base Part Number :
- PBSS4250
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Datasheets
- PBSS4250X,115
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4250X,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 380mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4250X,115 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 380mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4250X,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4250X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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