PBSS4230T,215
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- Mfr.Part #
- PBSS4230T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TO236AB
- Stock
- 4,837
- In Stock ：
- 4,837
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Base Part Number :
- PBSS4230
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Length :
- 6.35mm
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 300
- Height :
- 6.35mm
- Power Dissipation :
- 480mW
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Terminal Position :
- Dual
- Published :
- 2009
- Max Power Dissipation :
- 480mW
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Element Configuration :
- Single
- Frequency :
- 230MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.35mm
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Transition Frequency :
- 230MHz
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 230MHz
- Datasheets
- PBSS4230T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4230T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 230MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4230T,215 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4230T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4230T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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