PBSS4140T,235
- Mfr.Part #
- PBSS4140T,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO236AB
- Stock
- 133,330
- In Stock :
- 133,330
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- PBSS4140
- Power Dissipation :
- 450mW
- Power - Max :
- 450mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Max Power Dissipation :
- 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Min Operating Temperature :
- -65°C
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Supplier Device Package :
- TO-236AB
- Frequency - Transition :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- PBSS4140T,235

NPN 150°C TJ 100nA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4140T,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 40V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1A volts.
PBSS4140T,235 Features
the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of TO-236AB
PBSS4140T,235 Applications
There are a lot of Nexperia USA Inc.
PBSS4140T,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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