PBLS4001D,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Base Part Number :

PBLS4001

Current - Collector Cutoff (Max) :

1μA 100nA

Number of Elements :

2

Transition Frequency :

150MHz

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 310mV @ 100mA, 1A

Collector Emitter Breakdown Voltage :

40V

Max Collector Current :

700mA

Element Configuration :

Dual

Resistor - Base (R1) :

2.2k Ω

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Max Power Dissipation :

600mW

Current - Collector (Ic) (Max) :

100mA 700mA

Min Operating Temperature :

-65°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V / 300 @ 100mA 5V

ECCN Code :

EAR99

Number of Terminations :

6

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

150mV

Transistor Application :

SWITCHING

Radiation Hardening :

No

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Factory Lead Time :

6 Weeks

Package / Case :

SC-74, SOT-457

Polarity :

NPN, PNP

Published :

2009

Pin Count :

6

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

2.2k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

150MHz

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

40V

RoHS Status :

RoHS Compliant