NTMSD2P102LR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

FETKY™

Vgs (Max) :

±10V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.09Ohm

Number of Elements :

1

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

2.3A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

FET Type :

P-Channel

Power Dissipation-Max :

710mW Ta

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

FET Feature :

Schottky Diode (Isolated)

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.4A, 4.5V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

175 pF

DS Breakdown Voltage-Min :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 16V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

Additional Feature :

LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

260