NTMS4176PR2G
- Mfr.Part #
- NTMS4176PR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5.5A 8SOIC
- Stock
- 6,410
- In Stock :
- 6,410
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1720pF @ 24V
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 9.6A, 10V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Lifecycle Status :
- OBSOLETE (Last Updated: 4 days ago)
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- Rise Time :
- 9ns
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 15 ns
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- -7.3A
- Fall Time (Typ) :
- 9 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power Dissipation-Max :
- 810mW Ta
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Published :
- 2008
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 19.5 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- FET Type :
- P-Channel
- Drain Current-Max (Abs) (ID) :
- 5.5A
- Radiation Hardening :
- No
- Power Dissipation :
- 1.44W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- NTMS4176PR2G

P-Channel Tape & Reel (TR) 18m Ω @ 9.6A, 10V ±25V 1720pF @ 24V 17nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
NTMS4176PR2G Description
Power MOSFET NTMS4176PR2G is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
NTMS4176PR2G Features
?Low RDS(on) to Minimize Conduction Losses
?Low Capacitance to Minimize Driver Losses
?Optimized Gate Charge to Minimize Switching Losses
?SOIC-8 Surface Mount Package Saves Board Space
?This is a Pb-Free Device
NTMS4176PR2G Applications
?Load Switches
?Notebook PC's
?Desktop PC's
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