NTMS10P02R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

-10A

Element Configuration :

Single

Resistance :

14mOhm

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Terminal Position :

Dual

Turn On Delay Time :

25 ns

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Drain to Source Breakdown Voltage :

-20V

Transistor Element Material :

SILICON

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Voltage - Rated DC :

-20V

JESD-609 Code :

e3

Contact Plating :

Tin

Height :

1.5mm

Rds On (Max) @ Id, Vgs :

14m Ω @ 10A, 4.5V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Factory Lead Time :

21 Weeks

Continuous Drain Current (ID) :

10A

Length :

5mm

Fall Time (Typ) :

110 ns

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Power Dissipation-Max :

1.6W Ta

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 16V

ECCN Code :

EAR99

REACH SVHC :

Unknown

Vgs (Max) :

±12V

Rise Time :

40ns

Number of Terminations :

8

Threshold Voltage :

-880mV

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4.5A

Width :

4mm

FET Type :

P-Channel

Turn-Off Delay Time :

110 ns

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

20V