NTMSD2P102LR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain Current-Max (Abs) (ID) :

2.3A

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

240

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±10V

Transistor Application :

SWITCHING

Number of Elements :

1

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

20V

Number of Terminations :

8

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 16V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Schottky Diode (Isolated)

Pin Count :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Feedback Cap-Max (Crss) :

175 pF

Pbfree Code :

yes

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PDSO-G8

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Series :

FETKY™

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.4A, 4.5V

Drain-source On Resistance-Max :

0.09Ohm

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Power Dissipation-Max :

710mW Ta

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes