NTMS7N03R2G
- Mfr.Part #
- NTMS7N03R2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 4.8A 8SOIC
- Stock
- 9,350
- In Stock :
- 9,350
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.023Ohm
- Turn-Off Delay Time :
- 27 ns
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190pF @ 25V
- Factory Lead Time :
- 29 Weeks
- Mounting Type :
- Surface Mount
- Rise Time :
- 71ns
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 8
- Current Rating :
- 7A
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 7mA
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Voltage - Rated DC :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation :
- 2.5W
- Surface Mount :
- yes
- Published :
- 2005
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Power Dissipation-Max :
- 800mW Ta
- Fall Time (Typ) :
- 38 ns
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTMS7N03R2G

N-Channel Tape & Reel (TR) 23m Ω @ 7A, 10V ±20V 1190pF @ 25V 43nC @ 10V 8-SOIC (0.154, 3.90mm Width)
NTMS7N03R2G is a 30V N-channel MOSFET in SOIC-8 package. This device can be applied in DC-DC Converters, power management, motor controls, and inductive loads, due to the these features. And its ideal operating temperature is between -55 and +150℃. NTMS7N03R2G Vgs - Gate-Source Voltage is between - 20 V and + 20 V and Vgs th - Gate-Source Threshold Voltage is 1v
NTMS7N03R2G Features
? Ultra Low RDS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Miniature SOIC?8 Surface Mount Package
? Avalanche Energy Specified
? IDSS Specified at Elevated Temperature
? This is a Pb?Free Device
NTMS7N03R2G Applications
? DC?DC Converters
? Power Management
? Motor Controls
? Inductive Loads
? Replaces MMSF7N03HD, MMSF7N03Z, and MMSF5N03HD in Many Applications
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