NTMS5P02R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

-5.4A

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

22 ns

Drain Current-Max (Abs) (ID) :

3.95A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

-900 mV

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

26mOhm

Surface Mount :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

8

Turn-Off Delay Time :

70 ns

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Lead Free :

Lead Free

Fall Time (Typ) :

55 ns

Width :

4mm

FET Type :

P-Channel

Pin Count :

8

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 16V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

3.95A Ta

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

38 Weeks

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Published :

2006

Mounting Type :

Surface Mount

Number of Elements :

1

Height :

1.5mm

Element Configuration :

Single

Vgs (Max) :

±10V

Voltage - Rated DC :

-20V

Rds On (Max) @ Id, Vgs :

33m Ω @ 5.4A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-20V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Length :

5mm

Power Dissipation-Max :

790mW Ta

Continuous Drain Current (ID) :

5.4A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

10V

Drain to Source Voltage (Vdss) :

20V

Rise Time :

25ns