NTMS4939NR2G
- Mfr.Part #
- NTMS4939NR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8A 8SOIC
- Stock
- 5,441
- In Stock :
- 5,441
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 1.35W
- Vgs (Max) :
- ±20V
- Width :
- 4mm
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 25V
- Power Dissipation-Max :
- 800mW Ta
- Length :
- 5mm
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 7.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 36 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Fall Time (Typ) :
- 21.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- FET Type :
- N-Channel
- Rise Time :
- 3.1ns
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Turn On Delay Time :
- 10.6 ns
- Continuous Drain Current (ID) :
- 8A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Pins :
- 8
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Contact Plating :
- Tin
- Number of Terminations :
- 8
- Pin Count :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.5mm
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 36.7 ns
- Drain Current-Max (Abs) (ID) :
- 8A
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTMS4939NR2G

N-Channel Tape & Reel (TR) 8.4m Ω @ 7.5A, 10V ±20V 2000pF @ 25V 25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
NTMS4939NR2G Overview
A device's maximum input capacitance is 2000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 8A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTMS4939NR2G Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 36.7 ns
NTMS4939NR2G Applications
There are a lot of ON Semiconductor
NTMS4939NR2G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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