NTMS4916NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Mounting Type :

Surface Mount

Rise Time :

7.4ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

8

Terminal Position :

Dual

Length :

5mm

Drain Current-Max (Abs) (ID) :

9.4A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

15.6 ns

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

1376pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

890mW Ta

Number of Pins :

8

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Surface Mount :

yes

Power Dissipation :

1.3W

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Published :

2011

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

9m Ω @ 12A, 10V

Drain-source On Resistance-Max :

0.009Ohm

Continuous Drain Current (ID) :

11.6A

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

7.8A Ta

Turn-Off Delay Time :

32 ns

Terminal Form :

Gull wing

Number of Elements :

1

Contact Plating :

Tin

Width :

4mm

Turn On Delay Time :

9.4 ns