NTMS4816NR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

FET Type :

N-Channel

Element Configuration :

Single

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Length :

5mm

Lead Free :

Lead Free

ECCN Code :

EAR99

Width :

4mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Vgs (Max) :

±20V

Fall Time (Typ) :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Power Dissipation :

2.04W

Factory Lead Time :

2 Weeks

Pulsed Drain Current-Max (IDM) :

33A

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 25V

JESD-609 Code :

e3

Turn-Off Delay Time :

21.6 ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Terminations :

8

Pin Count :

8

Height :

1.5mm

Continuous Drain Current (ID) :

9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Power Dissipation-Max :

780mW Ta

Rise Time :

3.8ns

Turn On Delay Time :

8 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 9A, 10V

Peak Reflow Temperature (Cel) :

260