NTMFS5C604NLT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 50A, 10V

Package / Case :

8-PowerTDFN

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

40A Ta 287A Tc

JESD-609 Code :

e3

Number of Terminations :

5

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

900A

Pbfree Code :

yes

Mount :

Surface Mount

Continuous Drain Current (ID) :

287A

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.0017Ohm

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

276A

Mounting Type :

Surface Mount

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

776 mJ

Number of Elements :

1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PDSO-F5

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

8900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Power Dissipation-Max :

3.9W Ta 200W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V